Электронная библиотека (репозиторий) Томского государственного университета
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Influence of postgrowth processing technology on the laser induced damage threshold of ZnGeP2 single crystal 818 817 2
The influence of angstrom-scale roughness on the laser-induced damage threshold of single-crystal ZnGeP2 493 492 0
Laser-induced damage threshold of single crystal ZnGeP2 at 2.1 µm: the effect of crystal lattice quality at various pulse widths and repetition rates 757 753 2
Effects of the processing technology of CVD-ZnSe, Cr2+:ZnSe, and Fe2+:ZnSe polycrystalline optical elements on the damage threshold induced by a repetitively pulsed laser at 2.1 μm 314 312 2
Visualization and characterization of pre-breakdown processes in the volume of a ZnGeP2 single crystal during parametric generation of radiation in the wavelength range of 3.5–5 μm when pumped by Ho: YAG laser radiation 296 296 1
Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal 511 510 2
Laser-induced damage threshold of nonlinear GaSe and GaSe:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 μm 540 673 144
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Antipov, Oleg L.

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Antipov, Oleg L.

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